Products archive
- ArF Immersion Scanners
- ArF Scanners
- KrF Scanners/KrF Steppers
- i-line Steppers
- Metrology/Inspection Systems
ArF Immersion Scanners
NSR-S631E
Performance
Swipe horizontally to view full table.
Resolution | ≦ 38 nm |
---|---|
NA | 1.35 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Maximum exposure field | 26 mm × 33 mm |
Overlay | SMO*1: ≦ 1.7 nm, MMO*2: ≦ 2.3 nm |
Throughput | ≧ 250 wafers/hour (96 shots), ≧ 270 wafers/hour (96 shots, optional) |
- *1Single Machine Overlay: machine-to-self overlay accuracy (NSR-S631E#1 to S631E#1)
- *2Mix and Match Overlay: machine-to-machine overlay accuracy (NSR-S631E#1 to S631E#2)
NSR-S630D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 38 nm |
---|---|
NA | 1.35 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Maximum exposure field | 26 mm × 33 mm |
Overlay | SMO*1: ≦ 1.7 nm, MMO*2: ≦ 2.5 nm |
Throughput | ≧ 250 wafers/hour (96 shots) |
- *1Single Machine Overlay: machine-to-self overlay accuracy (NSR-S630D#1 to S630D#1)
- *2Mix and Match Overlay: machine-to-machine overlay accuracy (NSR-S630D#1 to S630D#2)
NSR-S622D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 38 nm |
---|---|
NA | 1.35 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Maximum exposure field | 26 mm × 33 mm |
Overlay | SMO*1: ≦ 2 nm, MMO*2: ≦ 3.5 nm |
Throughput | ≧ 200 wafers/hour (125 shots) |
- *1Single Machine Overlay: machine-to-self overlay accuracy (NSR-S622D#1 to S622D#1)
- *2Mix and Match Overlay: machine-to-machine overlay accuracy (NSR-S622D#1 to S622D#2)
NSR-S621D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 38 nm |
---|---|
NA | 1.35 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Maximum exposure field | 26 mm × 33 mm |
Overlay | ≦ 2 nm |
Throughput | ≧ 200 wafers/hour (125 shots) |
NSR-S620D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 38 nm |
---|---|
NA | 1.35 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Maximum exposure field | 26 × 33 mm |
Overlay | ≦ 3 nm |
Throughput | ≧ 180 wafers/hour (300 mm wafer, 125 shots) |
NSR-S610C
Performance
Swipe horizontally to view full table.
Resolution | ≦ 45 nm |
---|---|
NA | 1.30 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Overlay | ≦ 6.5 nm |
Throughput | ≧ 130 wafers/hour (300 mm wafer, 76 shots) |
NSR-S609B
Performance
Swipe horizontally to view full table.
Resolution | ≦ 55 nm |
---|---|
NA | 1.07 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Alignment accuracy | ≦ 7 nm |
Throughput | ≧ 130 wafers/hour (300 mm wafer, 76 shots) |
ArF Scanners
NSR-S320F
Performance
Swipe horizontally to view full table.
Resolution | ≦ 65 nm |
---|---|
NA | 0.92 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Maximum exposure field | 26 mm × 33 mm |
Overlay | ≦ 3 nm |
Throughput | ≧ 200 wafers/hour (125 shots) |
NSR-S310F
Performance
Swipe horizontally to view full table.
Resolution | ≦ 65 nm |
---|---|
NA | 0.92 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Maximum exposure field | 26 mm × 33 mm |
Overlay | ≦ 7 nm |
Throughput | ≧ 174 wafers/hour (76 shots) |
NSR-S308F
Performance
Swipe horizontally to view full table.
Resolution | ≦ 65 nm |
---|---|
NA | 0.92 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Alignment accuracy | ≦ 8 nm |
NSR-S307E
Performance
Swipe horizontally to view full table.
Resolution | ≦ 80 nm |
---|---|
NA | 0.85 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Alignment accuracy | ≦ 12 nm |
NSR-S306C
Performance
Swipe horizontally to view full table.
Resolution | ≦ 100 nm |
---|---|
NA | 0.78 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 20 nm |
NSR-S305B
Performance
Swipe horizontally to view full table.
Resolution | ≦ 110 nm |
---|---|
NA | 0.68 |
Exposure light source | ArF excimer laser (193 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 30 nm |
KrF Scanners/KrF Steppers
NSR-S210D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 110 nm |
---|---|
NA | 0.82 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Maximum exposure field | 26 mm × 33 mm |
Overlay | ≦ 9 nm |
Throughput | ≧ 176 wafers/hour (76 shots) |
NSR-S208D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 110 nm |
---|---|
NA | 0.82 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Alignment accuracy | ≦ 10 nm |
Throughput | ≧ 147 wafers/hour (300 mm wafer, 76 shots) |
NSR-S207D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 110 nm |
---|---|
NA | 0.82 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Alignment accuracy | ≦ 10 nm |
NSR-SF200
Performance
Swipe horizontally to view full table.
Resolution | ≦ 150 nm |
---|---|
NA | 0.63 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Alignment accuracy | ≦ 28 nm |
Throughput | ≧ 110 wafers/hour (300 mm wafer) ≧ 120 wafers/hour (200 mm wafer) |
NSR-S206D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 110 nm |
---|---|
NA | 0.82 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy | ≦ 20 nm |
NSR-S205C
Performance
Swipe horizontally to view full table.
Resolution | ≦ 130 nm |
---|---|
NA | 0.75 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 30 nm |
NSR-S204B
Performance
Swipe horizontally to view full table.
Resolution | ≦ 150 nm |
---|---|
NA | 0.68 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 35 nm |
NSR-S203B
Performance
Swipe horizontally to view full table.
Resolution | ≦ 180 nm |
---|---|
NA | 0.68 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 40 nm |
NSR-S202A
Performance
Swipe horizontally to view full table.
Resolution | ≦ 250 nm |
---|---|
NA | 0.60 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 45 nm |
NSR-2205EX14C
Performance
Swipe horizontally to view full table.
Resolution | ≦ 250 nm |
---|---|
NA | 0.60 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:5 |
Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 50 nm |
Alignment system | LSA (standard), FIA (standard), LIA (optional) |
NSR-2205EX12B
Performance
Swipe horizontally to view full table.
Resolution | ≦ 280 nm |
---|---|
NA | 0.55 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:5 |
Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 55 nm |
Alignment system | LSA (standard), FIA (standard), LIA (optional) |
NSR-S201A
Performance
Swipe horizontally to view full table.
Resolution | ≦ 250 nm |
---|---|
NA | 0.60 |
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 50 nm |
NSR-2205EX10B
Performance
Swipe horizontally to view full table.
Resolution | ≦ 320 nm |
---|---|
Exposure light source | KrF excimer laser (248 nm wavelength) |
Reduction ratio | 1:5 |
Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 80 nm |
i-line Steppers
NSR-2205i14E2
Performance
Swipe horizontally to view full table.
Resolution | ≦ 350 nm |
---|---|
NA | 0.63 |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:5 |
Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
Overlay | ≦ 40 nm |
Throughput | ≧ 103 wafers/hour (200 mm wafer) |
NSR-SF150
Performance
Swipe horizontally to view full table.
Resolution | ≦ 280 nm |
---|---|
NA | 0.62 |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Alignment accuracy | ≦ 25 nm |
Throughput | ≧ 180 wafers/hour (300 mm wafer, 76 shots) |
NSR-SF140
Performance
Swipe horizontally to view full table.
Resolution | ≦ 280 nm |
---|---|
NA | 0.62 |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Alignment accuracy | ≦ 35 nm |
Throughput | ≧ 117 wafers/hour (300 mm wafer, 76 shots) |
NSR-SF130
Performance
Swipe horizontally to view full table.
Resolution | ≦ 280 nm |
---|---|
NA | 0.62 |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 26 × 33 mm |
Alignment accuracy | ≦ 35 nm |
Throughput | ≧ 120 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer) |
NSR-SF120
Performance
Swipe horizontally to view full table.
Resolution | ≦ 280 nm |
---|---|
NA | 0.62 |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy | ≦ 35 nm |
Throughput | ≧ 100 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer) |
NSR-SF100
Performance
Swipe horizontally to view full table.
Resolution | ≦ 400 nm |
---|---|
NA | 0.52 |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:4 |
Exposure field | 25 × 33 mm |
Alignment accuracy | ≦ 45 nm |
Throughput | ≧ 80 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer) |
NSR-2205i12D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 350 nm |
---|---|
NA | 0.63 |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:5 |
Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm (6-inch reticle), 20.0 × 20.4 mm (5-inch reticle) |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 55 nm |
NSR-TFHi12
Performance
Swipe horizontally to view full table.
Resolution | ≦ 500 nm |
---|---|
NA | 0.30 ~ 0.45 (variable) |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:5 |
Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 55 nm |
NSR-2205i14E
Performance
Swipe horizontally to view full table.
Resolution | ≦ 350 nm |
---|---|
NA | 0.63 |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:5 |
Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 50 nm |
Alignment system | LSA (standard), FIA (standard), LIA (optional) |
NSR-4425i
Performance
Swipe horizontally to view full table.
Resolution | ≦ 700 nm |
---|---|
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:2.5 |
Exposure field | 44 mm square |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 100 nm |
NSR-2205i11D
Performance
Swipe horizontally to view full table.
Resolution | ≦ 350 nm |
---|---|
NA | 0.63 |
Exposure light source | i-line (365 nm wavelength) |
Reduction ratio | 1:5 |
Exposure field | 22 mm square to 17.9 (H) × 25.2 (V) mm |
Alignment accuracy (EGA, |M| + 3σ) | ≦ 70 nm |
Alignment system | LSA (standard), FIA (optional), LIA (optional) |