Lineup

Semiconductors control a host of functions in electronic equipment. Nikon offers a stellar lineup of cutting-edge lithography systems that support precision circuit design down to the nanometer level.

ArF Immersion Scanners

Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 1.7 nm, MMO*2: ≦ 2.3 nm
Throughput ≧ 250 wafers/hour (96 shots),
≧ 270 wafers/hour (96 shots, optional)
Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 2 nm, MMO*2: ≦ 3.5 nm
Throughput ≧ 200 wafers/hour (125 shots)

ArF Scanners

Resolution ≦ 65 nm
NA 0.92
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 2.0 nm, MMO*2: ≦ 5.0 nm
Throughput ≧ 230 wafers/hour (96 shots)

KrF Scanners

Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 3 nm, MMO*2: ≦ 6 nm
Throughput ≧ 230 wafers/hour (96 shots)
Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay ≦ 9 nm
Throughput ≧ 176 wafers/hour (76 shots)

i-line Steppers

Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 26 mm × 33 mm
Overlay ≦ 25 nm
Throughput ≧ 200 wafers/hour (76 shots)

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