Products archive

ArF Immersion Scanners

NSR-S630D

Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay SMO*1: ≦ 1.7 nm, MMO*2: ≦ 2.5 nm
Throughput ≧ 250 wafers/hour (96 shots)

NSR-S621D

Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay ≦ 2 nm
Throughput ≧ 200 wafers/hour (125 shots)

NSR-S620D

Resolution ≦ 38 nm
NA 1.35
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 × 33 mm
Overlay ≦ 3 nm
Throughput ≧ 180 wafers/hour (300 mm wafer, 125 shots)

NSR-S610C

Resolution ≦ 45 nm
NA 1.30
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Overlay ≦ 6.5 nm
Throughput ≧ 130 wafers/hour (300 mm wafer, 76 shots)

NSR-S609B

Resolution ≦ 55 nm
NA 1.07
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 7 nm
Throughput ≧ 130 wafers/hour (300 mm wafer, 76 shots)

ArF Scanners

NSR-S320F

Resolution ≦ 65 nm
NA 0.92
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay ≦ 3 nm
Throughput ≧ 200 wafers/hour (125 shots)

NSR-S310F

Resolution ≦ 65 nm
NA 0.92
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Maximum exposure field 26 mm × 33 mm
Overlay ≦ 7 nm
Throughput ≧ 174 wafers/hour (76 shots)

NSR-S308F

Resolution ≦ 65 nm
NA 0.92
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 8 nm

NSR-S307E

Resolution ≦ 80 nm
NA 0.85
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 12 nm

NSR-S306C

Resolution ≦ 100 nm
NA 0.78
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 20 nm

NSR-S305B

Resolution ≦ 110 nm
NA 0.68
Exposure light source ArF excimer laser (193 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 30 nm

KrF Scanners/KrF Steppers

NSR-S208D

Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 10 nm
Throughput ≧ 147 wafers/hour (300 mm wafer, 76 shots)

NSR-S207D

Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 10 nm

NSR-SF200

Resolution ≦ 150 nm
NA 0.63
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 28 nm
Throughput ≧ 110 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer)

NSR-S206D

Resolution ≦ 110 nm
NA 0.82
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy ≦ 20 nm

NSR-S205C

Resolution ≦ 130 nm
NA 0.75
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 30 nm

NSR-S204B

Resolution ≦ 150 nm
NA 0.68
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 35 nm

NSR-S203B

Resolution ≦ 180 nm
NA 0.68
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 40 nm

NSR-S202A

Resolution ≦ 250 nm
NA 0.60
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 45 nm

NSR-2205EX14C

Resolution ≦ 250 nm
NA 0.60
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 50 nm
Alignment system LSA (standard), FIA (standard), LIA (optional)

NSR-2205EX12B

Resolution ≦ 280 nm
NA 0.55
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 55 nm
Alignment system LSA (standard), FIA (standard), LIA (optional)

NSR-S201A

Resolution ≦ 250 nm
NA 0.60
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 50 nm

NSR-2205EX10B

Resolution ≦ 320 nm
Exposure light source KrF excimer laser (248 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 80 nm

i-line Steppers

NSR-2205i14E2

Resolution ≦ 350 nm
NA 0.63
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Overlay ≦ 40 nm
Throughput ≧ 103 wafers/hour (200 mm wafer)

NSR-SF150

Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 25 nm
Throughput ≧ 180 wafers/hour (300 mm wafer, 76 shots)

NSR-SF140

Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 35 nm
Throughput ≧ 117 wafers/hour (300 mm wafer, 76 shots)

NSR-SF130

Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 26 × 33 mm
Alignment accuracy ≦ 35 nm
Throughput ≧ 120 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer)

NSR-SF120

Resolution ≦ 280 nm
NA 0.62
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy ≦ 35 nm
Throughput ≧ 100 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer)

NSR-SF100

Resolution ≦ 400 nm
NA 0.52
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:4
Exposure field 25 × 33 mm
Alignment accuracy ≦ 45 nm
Throughput ≧ 80 wafers/hour (300 mm wafer)
≧ 120 wafers/hour (200 mm wafer) 

NSR-2205i12D

Resolution ≦ 350 nm
NA 0.63
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm (6-inch reticle), 20.0 × 20.4 mm (5-inch reticle)
Alignment accuracy (EGA, |M| + 3σ) ≦ 55 nm

NSR-TFHi12

Resolution ≦ 500 nm
NA 0.30 ~ 0.45 (variable)
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 55 nm

NSR-2205i14E

Resolution ≦ 350 nm
NA 0.63
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 50 nm
Alignment system LSA (standard), FIA (standard), LIA (optional)

NSR-4425i

Resolution ≦ 700 nm
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:2.5
Exposure field 44 mm square
Alignment accuracy (EGA, |M| + 3σ) ≦ 100 nm

NSR-2205i11D

Resolution ≦ 350 nm
NA 0.63
Exposure light source i-line (365 nm wavelength)
Reduction ratio 1:5
Exposure field 22 mm square to 17.9 (H) × 25.2 (V) mm
Alignment accuracy (EGA, |M| + 3σ) ≦ 70 nm
Alignment system LSA (standard), FIA (optional), LIA (optional)