Skip to sections.
With an ultrahigh-precision stage and maximum magnification module, it measures fine workpieces with ultrahigh accuracy (e.g., critical dimensions on patterned masks and bump heights)
Wafer level CSP
Wafer level bump heights
Wafer level SIP
Rerouted masks
Masks for MEMS
 Rerouted pattern |
 Photo mask |
 Flip chip bump and its 3D graphic |
 Surface analysis of flip chip bump (optional) |
| Stroke (XxYxZ) | ||
| With high magnification lens | 300 x 300 x 150 mm (11.8 x 11.8 x 5.9 in.) | |
| With low magnification lens | 250 x 300 x 150 mm (9.8 x 11.8 x 5.9 in.) | |
| Minimum readout | 0.01µm | |
| Maximum workpiece weight | 30kg (66.1 lb) | |
| Measuring accuracy | ||
| U1X, U1Y | 0.6 + 2L/1000µm (with a workpiece max. 10kg) | |
| U2XY | 0.9 + 3L/1000µm (with a workpiece max. 10kg) | |
| Z-axis (L: Length in mm < W.D.) | 0.9 + L/150µm | |
| Camera | B&W 1/3-in. CCD (progressive scan), color 1/3-in. CCD | |
| Working distance | High mag. objective lens: 9.8mm Low mag. objective lens: 32mm |
|
| Magnification vs field of view | 1 - 120X / 4.67 x 3.5 - 0.039 x 0.029 mm | |
| Auto focus | TTL Laser AF and Vision AF | |
| Illumination | Episcopic, diascopic (with high mag. head only), darkfield illumination | |
| Power source | AC100-240V±10%, 50/60Hz | |
| Power consumption | Max. 13A | |
| Dimensions & weight | ||
| Main unit only | 915 x 1060 x 1300 mm, approx. 450kg (36.0 x 41.7 x 51.2 in., 992.1 lb.) |
|
| Main unit & table | 1000 x 1100 x 1900 mm, approx. 570kg (39.4 x 43.3 x 74.8 in., 1256.6 lb.) |
|
| Controller | 250 (W) x 550 (D) x 500 (H) mm, approx. 31kg (9.8 x 21.7 x 19.7 in., 68.3 lb.) | |
| Footprint | 2400 (W) x 1400 (D) mm (94.5 x 55.1 in.) | |
| Host Computer | ||
|---|---|---|
| Main unit | IBM PC/AT (Windows® XP) | |
| Monitor | 20-in. TFT color | |
*The "Z120X" type is equivalent to the "TZ" type in Japan.
