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November 29, 2007
Nikon Corporation (President: Michio Kariya) has developed the NSR-SF155, a scan field i-line stepper that delivers powerful performance for non-critical layers in mass production of next-generation memory and microprocessors. Sales of the system will start in December of 2007. In 2006, Nikon developed the NSR-SF150, which uses Nikon's Skyhook Technology*, greatly reducing vibration levels. The NSR-SF150 provided far superior overlay accuracy and increased throughput. With the NSR-SF155, improved temperature stabilization in the chamber through heat countermeasures and increased speed of the wafer stage have improved throughput to 200 wafers or more per hour for 300 mm wafers.
Skyhook Technology
Nikon i-line Scan Field Stepper NSR-SF155
Sales Summary
| Product Name | Nikon i-line Scan Field Stepper NSR-SF155 |
|---|---|
| Sales launch term | December, 2007 |
Development Background
In January of 2000, Nikon developed the NSR-SF100, the first i-line stepper in the industry designed for mix-and-match solutions with DUV excimer scanners. It was optimized for exposure of non-critical layers, which account for approximately half of all layers. Its design offered superior cost performance by virtue of shared features with DUV excimer scanners, such as its reduction ratio and exposure field, and by offering high resolution and throughput. In 2006, its successor, the NSR-SF150 offered a high throughput of 180 wafers per hour, contributing substantially to improving productivity and reducing the total investment costs of manufacturing lines. As a result, more than 350 SF series steppers have been sold to date.
The NSR-SF155 is modeled after the NSR-SF150, with its new platform and Skyhook Technology, and has greatly improved throughput performance (200 wafers or more per hour).
Main Performance Features
| Resolution | 280 nm or better |
|---|---|
| NA (numerical aperture) | 0.62 |
| Light source | i-line (wavelength 365 nm) |
| Projection magnification | 1:4 |
| Exposure field | 26 x 33 mm |
| Overlay accuracy | 25 nm or better (M + 3σ) |
| Throughput (per hour) | 300 mm wafers: 200 or more wafers (exposure dose 200 mj/cm2) |
Main Characteristics