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November 19, 2003
Nikon Corporation (President: Teruo Shimamura) has developed the NSR-SF130, an i-line step-and-repeat scan field stepper that delivers powerful performance in the exposure of non-critical layers of next-generation DRAMs and MPUs. Sale of the system will start in January, 2004. The NSR-SF130 is designed to realize superior cost performance in a mix-and-match strategy with lens-scanning DUV excimer steppers that are currently in the mainstream in cutting-edge semiconductor manufacturing lines.
The NSR-SF130 provides a wide exposure field of 26 by 33mm and offers a high resolution of 280nm or better. And it boasts a high throughput of 120 or more 300mm wafers per hour, the highest class in the industry.
Sales Summary
| Product name | Nikon Step-and-Repeat System NSR-SF130 |
|---|---|
| Price (excluding tax) | About 600 ~ 650 million yen (varies by spec and configuration) |
| Sales launch date | January 2004 |
Development Background
In January of 2000, Nikon developed the NSR-SF100, the first i-line step-and-repeat scan field stepper in the industry designed for mix-and-match solutions with lens-scanning DUV excimer steppers. It was optimized for exposure of non-critical layers, which account for approximately half of all layers. Its design offered superior cost performance by virtue of shared features with lens-scanning DUV excimer steppers, such as its reduction ratio and exposure field, and by offering high resolution and throughput. Thereafter, the NSR-SF100 and its successors contributed substantially to improving productivity and reducing the total investment costs of manufacturing lines. To date the total number of SF series steppers sold has surpassed 120 units.
Based on the NSR-SF120, which realizes a high resolution of 280nm or better through use of a high N.A. lens, the NSR-SF130 being released this time offers greatly improved throughput by adopting a lightweight wafer stage and an optimized exposure sequence.
Major Performances
| Resolution | 280nm or better |
|---|---|
| N.A. (Numerical Aperture) | 0.62 |
| Light source | i-line (365nm wavelength) |
| Reduction ratio | 1:4 |
| Exposure field | 26 x 33mm |
| Alignment accuracy | 35nm or better (M+3σ) |
| Throughput (per hour) | 300mm wafers: 120 or more wafers 200mm wafers: 120 or more wafers |
Main Characteristics
The export of this product is controlled by Japanese Foreign Exchange Trade Law and International export control regime.
They shall not be exported without authorization from the appropriate governmental authorities.