High-throughput ArF scanner featuring an ultra-high N.A. lens Ordering to Start for Nikon's New NSR-S306C
Reduction Projection Exposure System

June 26, 2001 -- To support production of cutting-edge devices with 100-nm design rules, Nikon Corporation (President ; YOSHIDA, Shoichiro) has developed a new stepper -- NSR-S306C -- that incorporates lens-based scanning systems, an ultra-high N.A. lens, and an ArF Excimer laser.

The company will start receiving orders for the new system in spring 2002.

The NSR-S306C is the first system in the world to be equipped with an ultra-high N.A. lens (N.A. 0.78) that supports ArF excimer lasers (193-nm wavelength).
Throughput is at least 135 wafers per hour for 200-mm wafers and 85 wafers per hour for 300-mm wafers, the highest class in the industry.

Development Background

There are no limits to the increasing density of VLSIs, the foundation of the IT revolution.
Nowadays, we are starting 128-Mbit DRAM mass production, and efforts are under way to shift to mass production of 256-Mbit and 512-Mbit DRAMs.

To keep pace with this trend, Nikon unveiled the world's first lens-based scanning system, the NSR-S201A, in April 1995.
Since then, our lens-based scanning systems have received high marks for performance and reliability from semiconductor manufacturers throughout the world, enabling us to ship over 400 units to date, including i-line, KrF excimer laser, and ArF excimer laser models.

The first system in the world to be equipped with an ultra-high N.A. lens (N.A. 0.78), the NSR-S306C we are announcing today will meet the demands of tighter design rules as the industry accelerates from 120-nm to 100-nm applications.
Furthermore, the new system achieves the high throughput of 85 or more wafers/hr. for 300-mm wafer processing, which is gaining momentum in production lines.

Main Features

Ultra-High N.A. (0.78) Lens

The world's first system to be equipped with an ultra-high N.A. (0.78) Lens, the NSR-S306C achieves a resolution of 120 nm or better.
Furthermore, by utilizing SHRINC technology, it can realize a resolution of 100 nm or better to support mass production of next-generation DRAMs and MPUs.

Improved Throughput and Operational Stability

A newly developed body minimizes the effects of vibration and temperature on operation.
Throughput is improved as well: at least 135 wafers / hr. for 200-mm wafers, now the dominant standard, and 85 wafers / hr. for 300-mm wafers, the highest class in the industry. This represents an approximately 10 percent improvement over previous Nikon systems.

Main Specifications