Nikon Announces Order Start for New Step-and-Repeat Scanning System NSR-S205C --- High Throughput KrF Scanner With Ultra-High N.A. Lens

Development Background

Constant progress has been made on increasing the integration of VLSI chips, so that 64M to 128M DRAM are being mass produced today and changes are underway for 256M and 512M DRAM. In step with this trend, Nikon brought out the world's first lens-based "scanner" in April 1995. Since then, Nikon lens-based scanners have received excellent evaluations for performance and reliability from semiconductor manufacturers the world over, as witnessed by the fact that Nikon has shipped 250 or more units so far, including i(I)-line, KrF excimer laser, and ArF excimer laser models.

Now orders have started for the NSR-S205C, an exposure system that employs the world's first ultra-high N.A. (0.75) projection lens as well as a KrF excimer laser that can satisfy the demand for shrinking design rules that has occurred with the accelerated change from 150 to 130 nm.

Main Features

Ultra-High N.A. (0.75) Projection Lens

The world's first ultra-high N.A. reduction projection lens installed on the new model realizes a resolution of 150 nm or better with an N.A. of 0.75. Using a modified illumination technology such as SHRINC, a resolution of 130 nm or better can also be achieved for applications to the mass production of next-generation DRAM and MPU, which will involve high device miniaturization.

Enhanced Throughput and Machine Stability

The NSR-S205C has a newly developed body that can minimize vibration, temperature and other factors impacting the machine. Throughput is also enhanced, so that the exposure system can process 140 or more 200 mm wafers per hour (about 16 % higher than Nikon's previous system), and 84 or more 300 mm wafers an hour (about 12 % higher than Nikon's previous system).

300 mm Fab Suitability

The NSR-S205C is fully suitable to 300 mm wafer production lines, which are expected to be built in 2001. It is possible to apply the system to either 200 mm or 300 mm wafers as desired by the user.

Specifications

Resolution	150 nm or better (Normal illumination), 130 nm or better (Modified illumination)
N.A. (Numerical Aperture)	0.75
Light Source	KrF excimer laser (Wavelength : 248 nm)
Projection Magnification	1:4
Alignment Accuracy	30 nm or better (M + 3 sigma)
Throughput	140 or more wafers / hour (200 mm wafers), 84 or more wafers / hour (300 mm wafers)

• NSR-S204B